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Creators/Authors contains: "Steinhardt, Rachel_A"

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  1. ; ; ; ; ; ; ; (, APL Materials)
  2. ; ; ; ; ; ; ; ; ; ; et al (, Advanced Materials)
    Abstract Results of switching behavior of the improper ferroelectric LuFeO3are presented. Using a model set of films prepared under controlled chemical and growth‐rate conditions, it is shown that defects can reduce the quasi‐static switching voltage by up to 40% in qualitative agreement with first‐principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO3. It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics. 
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